DMN26D0UFB4-7 vs DMN2056U-13 feature comparison

DMN26D0UFB4-7 Diodes Incorporated

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DMN2056U-13 Diodes Incorporated

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC DIODES INC
Part Package Code DFN
Pin Count 3
Manufacturer Package Code CASE DFN1006H4-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Diodes Incorporated Diodes Incorporated
Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 0.24 A 4 A
Drain-source On Resistance-Max 3 Ω 0.038 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3 R-PDSO-G3
JESD-609 Code e4 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.35 W 0.94 W
Qualification Status Not Qualified
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Finish NICKEL PALLADIUM GOLD Matte Tin (Sn)
Terminal Form NO LEAD GULL WING
Terminal Position BOTTOM DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 8 Weeks
Feedback Cap-Max (Crss) 34 pF
Operating Temperature-Min -55 °C

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