DM2816AH-200/B
vs
DM5516A-200
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
SEEQ TECHNOLOGY INC
|
SEEQ TECHNOLOGY INC
|
Package Description |
DIP, DIP24,.6
|
DIP, DIP24,.6
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
3A001.A.2.C
|
3A001.A.2.C
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
200 ns
|
200 ns
|
Additional Feature |
AUTOMATIC WRITE
|
AUTOMATIC WRITE
|
Command User Interface |
NO
|
NO
|
Data Polling |
YES
|
YES
|
Endurance |
10000 Write/Erase Cycles
|
100000 Write/Erase Cycles
|
JESD-30 Code |
R-GDIP-T24
|
R-GDIP-T24
|
JESD-609 Code |
e0
|
e0
|
Memory Density |
16384 bit
|
16384 bit
|
Memory IC Type |
EEPROM
|
EEPROM
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
24
|
24
|
Number of Words |
2048 words
|
2048 words
|
Number of Words Code |
2000
|
2000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Organization |
2KX8
|
2KX8
|
Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC, GLASS-SEALED
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP24,.6
|
DIP24,.6
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
5 V
|
5 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Screening Level |
38535Q/M;38534H;883B
|
|
Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
Surface Mount |
NO
|
NO
|
Technology |
NMOS
|
NMOS
|
Temperature Grade |
MILITARY
|
MILITARY
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Toggle Bit |
NO
|
NO
|
Write Cycle Time-Max (tWC) |
2 ms
|
10 ms
|
Base Number Matches |
1
|
2
|
|
|
|
Compare DM2816AH-200/B with alternatives
Compare DM5516A-200 with alternatives