DLTS-30E3 vs DLZ-24 feature comparison

DLTS-30E3 Microsemi Corporation

Buy Now Datasheet

DLZ-24 Vishay Semiconductors

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP GENERAL SEMICONDUCTOR INC
Package Description R-CDIP-T16 R-CDIP-T16
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 33.3 V 26.7 V
Configuration COMMON ANODE, 15 ELEMENTS COMMON ANODE, 15 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-CDIP-T16 R-CDIP-T16
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 15 15
Number of Terminals 16 16
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 30 V 24 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 2
Rohs Code No
Part Package Code DIP
Pin Count 16
Manufacturer Package Code CASE 29
Additional Feature LOW CAPACITANCE
Breakdown Voltage-Nom 27 V
Clamping Voltage-Max 52.1 V
Diode Capacitance-Min 275 pF
JESD-609 Code e0
Qualification Status Not Qualified
Reverse Current-Max 2 µA
Terminal Finish Tin/Lead (Sn/Pb)

Compare DLTS-30E3 with alternatives

Compare DLZ-24 with alternatives