DL5227B-GT1 vs 1N5227C_AX_10001 feature comparison

DL5227B-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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1N5227C_AX_10001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD PAN JIT INTERNATIONAL INC
Package Description O-LELF-R2 O-LALF-W2
Reach Compliance Code unknown compliant
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code O-LELF-R2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Voltage-Nom 3.6 V 3.6 V
Surface Mount YES NO
Technology ZENER ZENER
Terminal Form WRAP AROUND WIRE
Terminal Position END AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 5% 10%
Working Test Current 20 mA 20 mA
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Dynamic Impedance-Max 24 Ω
Forward Voltage-Max (VF) 1.1 V
JEDEC-95 Code DO-35
Knee Impedance-Max 1700 Ω
Operating Temperature-Max 175 °C
Reverse Current-Max 15 µA
Reverse Test Voltage 1 V

Compare DL5227B-GT1 with alternatives

Compare 1N5227C_AX_10001 with alternatives