DL4448
vs
1N4448W-G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
HITANO ENTERPRISE CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description
O-LELF-R2
R-PDSO-G2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.70
Additional Feature
HIGH RELIABILITY, LOW POWER LOSS
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
O-LELF-R2
R-PDSO-G2
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Output Current-Max
0.15 A
0.25 A
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Power Dissipation-Max
0.5 W
0.5 W
Rep Pk Reverse Voltage-Max
50 V
75 V
Reverse Recovery Time-Max
0.004 µs
0.004 µs
Surface Mount
YES
YES
Terminal Form
WRAP AROUND
GULL WING
Terminal Position
END
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
9
2
Application
GENERAL PURPOSE
Qualification Status
Not Qualified
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