DI2010S_R2_10001 vs KBP210G feature comparison

DI2010S_R2_10001 PanJit Semiconductor

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KBP210G EIC Semiconductor Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer PAN JIT INTERNATIONAL INC EIC SEMICONDUCTOR CO LTD
Package Description R-PDSO-G4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PDSO-G4
Non-rep Pk Forward Current-Max 50 A 35 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C
Output Current-Max 2 A 2 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount YES NO
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 18

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