DI1510S_R2_10001 vs DB157 feature comparison

DI1510S_R2_10001 PanJit Semiconductor

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DB157 LRC Leshan Radio Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer PAN JIT INTERNATIONAL INC LESHAN RADIO CO LTD
Package Description R-PDSO-G4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.05 V
JESD-30 Code R-PDSO-G4 R-PDIP-T4
Non-rep Pk Forward Current-Max 50 A 60 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -50 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 1 20
JESD-609 Code e3
Reverse Current-Max 5 µA
Reverse Test Voltage 1000 V
Terminal Finish TIN

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