DF2S6.8FS(L3EKA3,E
vs
CPZ19-BZX84C6V8#N/A
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TOSHIBA CORP
|
CENTRAL SEMICONDUCTOR CORP
|
Package Description |
R-PDSO-F2
|
S-XUUC-N1
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.50
|
8541.10.00.50
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
ZENER DIODE
|
ZENER DIODE
|
JESD-30 Code |
R-PDSO-F2
|
S-XUUC-N1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
1
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
UNCASED CHIP
|
Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
Reference Standard |
IEC-61000-4-5
|
|
Reference Voltage-Nom |
6.8 V
|
6.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
ZENER
|
ZENER
|
Terminal Form |
FLAT
|
NO LEAD
|
Terminal Position |
DUAL
|
UPPER
|
Voltage Tol-Max |
5.88%
|
5.88%
|
Working Test Current |
5 mA
|
5 mA
|
Base Number Matches |
1
|
1
|
Dynamic Impedance-Max |
|
15 Ω
|
Forward Voltage-Max (VF) |
|
0.9 V
|
Knee Impedance-Max |
|
80 Ω
|
Operating Temperature-Min |
|
-65 °C
|
Reverse Current-Max |
|
2 µA
|
Reverse Test Voltage |
|
4 V
|
Voltage Temp Coeff-Max |
|
3.4 mV/°C
|
|
|
|
Compare DF2S6.8FS(L3EKA3,E with alternatives
-
DF2S6.8FS(L3EKA3,E vs CPZ19-BZX84C6V8
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TL3TMA)
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TL3PSE,E
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TL3SMMD)
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TL3SONY)
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TH3CH)
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS,L3M(T
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TL3CH)
-
DF2S6.8FS(L3EKA3,E vs DF2S6.8FS(TL3OLY)
Compare CPZ19-BZX84C6V8#N/A with alternatives