DF1508S-E3/45 vs DB106S feature comparison

DF1508S-E3/45 Vishay Semiconductors

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DB106S Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description R-PDSO-G4
Pin Count 4
Manufacturer Package Code CASE DFS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Vishay
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 45 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 22
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 5 µA
Reverse Test Voltage 800 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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