DF15005M
vs
DB1501S
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
SECOS CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
50 V
50 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
1.5 A
1.5 A
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
50 V
50 V
Surface Mount
NO
YES
Base Number Matches
4
1
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PDSO-G4
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Terminal Form
GULL WING
Terminal Position
DUAL
Compare DF15005M with alternatives
Compare DB1501S with alternatives