DF10M-T
vs
CBR1-D100
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
DIODES INC
CENTRAL SEMICONDUCTOR CORP
Package Description
R-PDIP-T4
DIP-4
Pin Count
4
4
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
1000 V
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
R-PDIP-T4
R-PDIP-T4
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reverse Current-Max
10 µA
Reverse Test Voltage
1000 V
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare DF10M-T with alternatives
Compare CBR1-D100 with alternatives