DF10 vs CBR1-D100 feature comparison

DF10 Lite-On Semiconductor Corporation

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CBR1-D100 Central Semiconductor Corp

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer LITE-ON SEMICONDUCTOR CORP CENTRAL SEMICONDUCTOR CORP
Package Description PLASTIC PACKAGE-4 DIP-4
Pin Count 4 4
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDIP-T4 R-PDIP-T4
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 21 10
Pbfree Code No
Rohs Code No
JESD-609 Code e0
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 10 µA
Reverse Test Voltage 1000 V
Terminal Finish Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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