DF02S-T3 vs DB103S feature comparison

DF02S-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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DB103S Bytesonic Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD BYTESONIC ELECTRONICS CO LTD
Package Description R-PDSO-G4
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 200 V 200 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 200 V 200 V
Surface Mount YES YES
Terminal Form GULL WING
Terminal Position DUAL
Base Number Matches 3 21
ECCN Code EAR99
Operating Temperature-Max 125 °C

Compare DF02S-T3 with alternatives

Compare DB103S with alternatives