DF01S-G vs DF01S-T3 feature comparison

DF01S-G WEITRON INTERNATIONAL CO., LTD.

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DF01S-T3 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes No
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer WEITRON TECHNOLOGY CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99
Breakdown Voltage-Min 100 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Non-rep Pk Forward Current-Max 50 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 1 A 1 A
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Base Number Matches 4 3
Package Description R-PDSO-G4
Diode Element Material SILICON
JESD-30 Code R-PDSO-G4
Moisture Sensitivity Level 1
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL

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