DBS157G vs KBP157GC2G feature comparison

DBS157G Taiwan Semiconductor

Buy Now Datasheet

KBP157GC2G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Taiwan Semiconductor
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1.5 A 1.5 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount YES NO
Base Number Matches 1 1
Package Description R-PSIP-W4
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code R-PSIP-W4
JESD-609 Code e3
Number of Terminals 4
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Terminal Form WIRE
Terminal Position SINGLE

Compare DBS157G with alternatives

Compare KBP157GC2G with alternatives