DBS157G
vs
KBP157GC2G
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Taiwan Semiconductor
Breakdown Voltage-Min
1000 V
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
1.5 A
1.5 A
Peak Reflow Temperature (Cel)
260
Rep Pk Reverse Voltage-Max
1000 V
1000 V
Surface Mount
YES
NO
Base Number Matches
1
1
Package Description
R-PSIP-W4
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PSIP-W4
JESD-609 Code
e3
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reference Standard
UL RECOGNIZED
Terminal Finish
MATTE TIN
Terminal Form
WIRE
Terminal Position
SINGLE
Compare DBS157G with alternatives
Compare KBP157GC2G with alternatives