DBL156GC1
vs
HDBL156G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
800 V
800 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
R-PDIP-T4
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reference Standard
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
800 V
800 V
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Compare DBL156GC1 with alternatives
Compare HDBL156G with alternatives