DBL155GC1G
vs
HDBLS155G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
600 V
600 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
R-PDIP-T4
JESD-609 Code
e3
e3
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reference Standard
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
600 V
600 V
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Base Number Matches
1
1
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Compare DBL155GC1G with alternatives
Compare HDBLS155G with alternatives