DB1506S-C
vs
HDBLS156G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SECOS CORP
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
Breakdown Voltage-Min
800 V
800 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
JESD-30 Code
R-PDSO-G4
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Rep Pk Reverse Voltage-Max
800 V
800 V
Surface Mount
YES
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Base Number Matches
1
1
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Compare DB1506S-C with alternatives
Compare HDBLS156G with alternatives