DB104
vs
DB1D
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
FORWARD INTERNATIONAL ELECTRONICS LTD
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Breakdown Voltage-Min
400 V
400 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
50 A
50 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
150 °C
Output Current-Max
1 A
1 A
Rep Pk Reverse Voltage-Max
400 V
400 V
Surface Mount
NO
NO
Base Number Matches
35
4
Rohs Code
HTS Code
8541.10.00.80
Diode Element Material
SILICON
JESD-30 Code
R-PDIP-T4
JESD-609 Code
e0
Number of Terminals
4
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Qualification Status
Not Qualified
Reverse Current-Max
0.00001 µA
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Compare DB104 with alternatives
Compare DB1D with alternatives