DB101
vs
DF005-G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Contact Manufacturer
Obsolete
Ihs Manufacturer
MOSPEC SEMICONDUCTOR CORP
SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Breakdown Voltage-Min
50 V
50 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.1 V
Non-rep Pk Forward Current-Max
50 A
30 A
Number of Elements
4
4
Number of Phases
1
1
Operating Temperature-Max
150 °C
Output Current-Max
1 A
1 A
Rep Pk Reverse Voltage-Max
50 V
50 V
Surface Mount
NO
NO
Base Number Matches
1
1
Rohs Code
Package Description
GREEN, PLASTIC, DIP-4
kg CO2e/kg
8.4
Average Weight (mg)
5992.27
CO2e (mg)
50335.066
Category CO2 Kg
8.4
EU RoHS Version
RoHS 2 (2015/863/EU)
Diode Element Material
SILICON
JESD-30 Code
R-PDIP-T4
Moisture Sensitivity Level
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
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Compare DF005-G with alternatives