D650N02TXPSA1
vs
D650N02T
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
O-CEDB-N2
|
O-CEDB-N2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Samacsys Manufacturer |
Infineon
|
Infineon
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.44 V
|
1.44 V
|
| JESD-30 Code |
O-CEDB-N2
|
O-CEDB-N2
|
| Non-rep Pk Forward Current-Max |
5100 A
|
5100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
180 °C
|
180 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Output Current-Max |
650 A
|
650 A
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
DISK BUTTON
|
DISK BUTTON
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Reverse Current-Max |
20000 µA
|
20000 µA
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
2
|
|
|
|