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D2148H-3 vs HM1-6514B-8 feature comparison

D2148H-3 Intel Corporation

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HM1-6514B-8 Intersil Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEL CORP INTERSIL CORP
Package Description DIP, DIP18,.3 DIP, DIP18,.3
Reach Compliance Code compliant unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 55 ns 220 ns
I/O Type COMMON COMMON
JESD-30 Code R-XDIP-T18 R-XDIP-T18
JESD-609 Code e0
Memory Density 4096 bit 4096 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 4 4
Number of Terminals 18 18
Number of Words 1024 words 1024 words
Number of Words Code 1000 1000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 1KX4 1KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC CERAMIC
Package Code DIP DIP
Package Equivalence Code DIP18,.3 DIP18,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.15 mA 0.019 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology MOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 5 2
Screening Level 38535Q/M;38534H;883B
Standby Current-Max 0.000025 A
Standby Voltage-Min 2 V
Memory » SRAMs
Memory » SRAMs

Compare D2148H-3 with alternatives

Compare HM1-6514B-8 with alternatives