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CY7C186-15PC vs CY7C162-15DMB feature comparison

CY7C186-15PC Cypress Semiconductor

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CY7C162-15DMB Cypress Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 15 ns 15 ns
I/O Type COMMON SEPARATE
JESD-30 Code R-PDIP-T28 R-XDIP-T28
JESD-609 Code e0 e0
Memory Density 65536 bit 65536 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 8 4
Number of Terminals 28 28
Number of Words 8192 words 16384 words
Number of Words Code 8000 16000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 125 °C
Operating Temperature-Min -55 °C
Organization 8KX8 16KX4
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY CERAMIC
Package Code DIP DIP
Package Equivalence Code DIP28,.6 DIP28,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Standby Current-Max 0.03 A 0.05 A
Standby Voltage-Min 4.5 V 4.5 V
Supply Current-Max 0.12 mA 0.135 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL MILITARY
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Screening Level 38535Q/M;38534H;883B
Memory » SRAMs
Memory » SRAMs

Compare CY7C186-15PC with alternatives

Compare CY7C162-15DMB with alternatives