CY7C1512KV18-250BZCT
vs
K7R641882M-FC25T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
SAMSUNG SEMICONDUCTOR INC
Package Description
13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
BGA, BGA165,11X15,40
Reach Compliance Code
compliant
unknown
ECCN Code
3A991.B.2.A
3A991.B.2.A
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
0.45 ns
0.45 ns
Additional Feature
PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V
Clock Frequency-Max (fCLK)
250 MHz
250 MHz
I/O Type
SEPARATE
SEPARATE
JESD-30 Code
R-PBGA-B165
R-PBGA-B165
JESD-609 Code
e0
e1
Length
15 mm
Memory Density
75497472 bit
75497472 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
18
18
Moisture Sensitivity Level
3
3
Number of Functions
1
Number of Terminals
165
165
Number of Words
4194304 words
4194304 words
Number of Words Code
4000000
4000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
70 °C
70 °C
Operating Temperature-Min
Organization
4MX18
4MX18
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
LBGA
BGA
Package Equivalence Code
BGA165,11X15,40
BGA165,11X15,40
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE
GRID ARRAY
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1.4 mm
Standby Voltage-Min
1.7 V
1.7 V
Supply Current-Max
0.65 mA
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
COMMERCIAL
COMMERCIAL
Terminal Finish
Tin/Lead (Sn/Pb)
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
1 mm
1 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
20
Width
13 mm
Base Number Matches
2
1
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Compare K7R641882M-FC25T with alternatives