CY7C1512KV18-250BZCT vs K7R641882M-FC25 feature comparison

CY7C1512KV18-250BZCT Cypress Semiconductor

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K7R641882M-FC25 Samsung Semiconductor

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP SAMSUNG SEMICONDUCTOR INC
Package Description 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 BGA, BGA165,11X15,40
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Additional Feature PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
JESD-609 Code e0 e0
Length 15 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 18 18
Moisture Sensitivity Level 3 3
Number of Functions 1
Number of Terminals 165 165
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 4MX18 4MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA BGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.4 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.65 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 13 mm
Base Number Matches 2 1

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