CY14B108L-BA25XIT vs K6F8008R2M-FF850 feature comparison

CY14B108L-BA25XIT Infineon Technologies AG

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K6F8008R2M-FF850 Samsung Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG SAMSUNG SEMICONDUCTOR INC
Package Description FBGA-48 TFBGA,
Reach Compliance Code compliant compliant
Access Time-Max 25 ns 85 ns
JESD-30 Code R-PBGA-B48 R-PBGA-B48
JESD-609 Code e1
Length 10 mm 12 mm
Memory Density 8388608 bit 8388608 bit
Memory IC Type NON-VOLATILE SRAM STANDARD SRAM
Memory Width 8 8
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 1048576 words 1048576 words
Number of Words Code 1000000 1000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 1MX8 1MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Standby Current-Max 0.01 A
Supply Current-Max 0.075 mA
Supply Voltage-Max (Vsup) 3.6 V 2.2 V
Supply Voltage-Min (Vsup) 2.7 V 1.65 V
Supply Voltage-Nom (Vsup) 3 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 6 mm 8 mm
Base Number Matches 2 1
Part Package Code BGA
Pin Count 48
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41

Compare CY14B108L-BA25XIT with alternatives

Compare K6F8008R2M-FF850 with alternatives