CSD19505KTT
vs
IRFSL3107PBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
TEXAS INSTRUMENTS INC
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PSSO-G3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Date Of Intro
2016-03-16
Samacsys Manufacturer
Texas Instruments
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
510 mJ
300 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
75 V
Drain Current-Max (ID)
200 A
195 A
Drain-source On Resistance-Max
0.0038 Ω
0.003 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
34 pF
JESD-30 Code
R-PSSO-G3
R-PSIP-T3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
2
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
400 A
900 A
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
JEDEC-95 Code
TO-262AA
Qualification Status
Not Qualified
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