CR1F-100TIN/LEAD
vs
1N5399GPE3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2018-01-31
|
|
| Application |
FAST RECOVERY
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.2 V
|
|
| JEDEC-95 Code |
DO-41
|
DO-15
|
| JESD-30 Code |
O-XALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
1.5 A
|
1.5 A
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
1000 V
|
1000 V
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.5 µs
|
2 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
LOW FORWARD VOLTAGE, LOW LEAKAGE CURRENT
|
|
|
|
Compare CR1F-100TIN/LEAD with alternatives
Compare 1N5399GPE3 with alternatives