CQ220I-12N vs TXDV812 feature comparison

CQ220I-12N Central Semiconductor Corp

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TXDV812 STMicroelectronics

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.30.00.80 8541.30.00.80
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Critical Rate of Rise of Off-State Voltage-Min 500 V/us 500 V/us
DC Gate Trigger Current-Max 50 mA 100 mA
DC Gate Trigger Voltage-Max 2.5 V 1.5 V
Holding Current-Max 100 mA 100 mA
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e3
Leakage Current-Max 2.5 mA 2 mA
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -65 °C -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Qualification Status Not Qualified Not Qualified
RMS On-state Current-Max 12 A 12 A
Repetitive Peak Off-state Voltage 800 V 800 V
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Trigger Device Type 4 QUADRANT LOGIC LEVEL TRIAC ALTERNISTOR TRIAC
Base Number Matches 3 4
Part Package Code TO-220AB
Package Description PLASTIC PACKAGE-3
Pin Count 3
Critical Rate of Rise of Commutation Voltage-Min 10 V/us
JEDEC-95 Code TO-220AB
Reference Standard UL RECOGNIZED
Repetitive Peak Off-state Leakage Current-Max 10 µA

Compare CQ220I-12N with alternatives

Compare TXDV812 with alternatives