CP191V-2N2222A-WR
vs
MMBT2222A-AQ
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
DIOTEC SEMICONDUCTOR AG
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.8 A
0.6 A
Collector-Base Capacitance-Max
8 pF
Collector-Emitter Voltage-Max
40 V
40 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
40
40
JESD-30 Code
S-XUUC-N2
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
2
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
UNCASED CHIP
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
YES
Terminal Form
NO LEAD
GULL WING
Terminal Position
UPPER
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
300 MHz
250 MHz
VCEsat-Max
1 V
Base Number Matches
1
1
Rohs Code
Date Of Intro
2018-06-14
JEDEC-95 Code
TO-236
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reference Standard
AEC-Q101
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
10
Turn-off Time-Max (toff)
285 ns
Turn-on Time-Max (ton)
35 ns
Compare CP191V-2N2222A-WR with alternatives
Compare MMBT2222A-AQ with alternatives