CP191V-2N2222A-CM
vs
MMBT4401F2
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
YANGZHOU YANGJIE ELECTRONICS CO LTD
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.8 A
|
0.6 A
|
| Collector-Base Capacitance-Max |
8 pF
|
|
| Collector-Emitter Voltage-Max |
40 V
|
40 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
40
|
100
|
| JESD-30 Code |
S-XUUC-N2
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
UNCASED CHIP
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
GULL WING
|
| Terminal Position |
UPPER
|
DUAL
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
300 MHz
|
250 MHz
|
| VCEsat-Max |
1 V
|
0.4 V
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| HTS Code |
|
8541.21.00.75
|
| Moisture Sensitivity Level |
|
1
|
| Power Dissipation Ambient-Max |
|
0.3 W
|
| Power Dissipation-Max (Abs) |
|
0.3 W
|
| Turn-off Time-Max (toff) |
|
255 ns
|
| Turn-on Time-Max (ton) |
|
35 ns
|
|
|
|
Compare CP191V-2N2222A-CM with alternatives
Compare MMBT4401F2 with alternatives