CP191V-2N2222A-CM
vs
MMBT4401F2
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
YANGZHOU YANGJIE ELECTRONICS CO LTD
Package Description
,
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.8 A
0.6 A
Collector-Base Capacitance-Max
8 pF
Collector-Emitter Voltage-Max
40 V
40 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
40
100
JESD-30 Code
S-XUUC-N2
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
2
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
UNCASED CHIP
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
YES
Terminal Form
NO LEAD
GULL WING
Terminal Position
UPPER
DUAL
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
300 MHz
250 MHz
VCEsat-Max
1 V
0.4 V
Base Number Matches
1
1
Rohs Code
HTS Code
8541.21.00.75
Moisture Sensitivity Level
1
Power Dissipation Ambient-Max
0.3 W
Power Dissipation-Max (Abs)
0.3 W
Turn-off Time-Max (toff)
255 ns
Turn-on Time-Max (ton)
35 ns
Compare CP191V-2N2222A-CM with alternatives
Compare MMBT4401F2 with alternatives