CM28C256-350/B vs CQ28C256-350 feature comparison

CM28C256-350/B LSI Corporation

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CQ28C256-350 LSI Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SEEQ TECHNOLOGY INC SEEQ TECHNOLOGY INC
Package Description , ,
Reach Compliance Code unknown unknown
ECCN Code 3A001.A.2.C EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 350 ns 350 ns
Additional Feature AUTOMATIC WRITE;PAGE WRITE AUTOMATIC WRITE;PAGE WRITE
JESD-30 Code R-CDIP-T28 R-CDIP-T28
Memory Density 262144 bit 262144 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 28 28
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 70 °C
Operating Temperature-Min -55 °C
Organization 32KX8 32KX8
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY COMMERCIAL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 1 1

Compare CM28C256-350/B with alternatives

Compare CQ28C256-350 with alternatives