CLC110A8D
vs
CLC111ALC
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Part Package Code
DIP
WAFER
Package Description
DIP, DIP8,.3
DIE, DIE OR CHIP
Pin Count
8
4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.33.00.01
8542.33.00.01
kg CO2e/kg
12.3
12.3
Average Weight (mg)
569.675
0.6
CO2e (mg)
7007.002
7.38
Category CO2 Kg
12.3
12.3
Compliance Temperature Grade
Military: -55C to +125C
Industrial: -40C to +85C
Amplifier Type
BUFFER
BUFFER
Average Bias Current-Max (IIB)
50 µA
15 µA
Bandwidth (3dB)-Nom
90 MHz
800 MHz
Bias Current-Max (IIB) @25C
50 µA
15 µA
Input Offset Voltage-Max
8000 µV
9000 µV
JESD-30 Code
R-GDIP-T8
R-XUUC-N4
JESD-609 Code
e0
Length
10.045 mm
Neg Supply Voltage Limit-Max
-7 V
-7 V
Neg Supply Voltage-Nom (Vsup)
-5 V
-5 V
Number of Functions
1
1
Number of Terminals
8
4
Operating Temperature-Max
125 °C
85 °C
Operating Temperature-Min
-55 °C
-40 °C
Output Current-Min
0.05 A
0.05 A
Package Body Material
CERAMIC, GLASS-SEALED
UNSPECIFIED
Package Code
DIP
DIE
Package Equivalence Code
DIP8,.3
DIE OR CHIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
UNCASED CHIP
Qualification Status
Not Qualified
Not Qualified
Screening Level
38535Q/M;38534H;883B
Seated Height-Max
5.08 mm
Slew Rate-Min
500 V/us
2700 V/us
Slew Rate-Nom
800 V/us
3500 V/us
Supply Current-Max
20 mA
12 mA
Supply Voltage Limit-Max
7 V
7 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
YES
Technology
BIPOLAR
BIPOLAR
Temperature Grade
MILITARY
INDUSTRIAL
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
NO LEAD
Terminal Pitch
2.54 mm
Terminal Position
DUAL
UPPER
Width
7.62 mm
Base Number Matches
3
2
Compare CLC110A8D with alternatives
Compare CLC111ALC with alternatives