CGD914MI
vs
CGD914,112
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
SOT-115J
|
SOT-115J
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
LOW NOISE, HIGH RELIABILITY
|
LOW NOISE, HIGH RELIABILITY
|
| Characteristic Impedance |
75 Ω
|
75 Ω
|
| Construction |
MODULE
|
MODULE
|
| Gain |
20.2 dB
|
20.2 dB
|
| JESD-609 Code |
e4
|
e4
|
| Number of Functions |
1
|
1
|
| Operating Frequency-Max |
870 MHz
|
870 MHz
|
| Operating Frequency-Min |
40 MHz
|
40 MHz
|
| Operating Temperature-Max |
100 °C
|
100 °C
|
| Operating Temperature-Min |
-20 °C
|
-20 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Equivalence Code |
SOT-115J
|
SOT-115J
|
| Power Supplies |
24 V
|
24 V
|
| RF/Microwave Device Type |
WIDE BAND HIGH POWER
|
WIDE BAND HIGH POWER
|
| Supply Current-Max |
375 mA
|
375 mA
|
| Technology |
HYBRID
|
HYBRID
|
| Terminal Finish |
Gold (Au)
|
Gold (Au)
|
| Base Number Matches |
1
|
1
|
| Input Power-Max (CW) |
|
19.75 dBm
|
|
|
|