CFH120-08
vs
FHX35LG
feature comparison
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
FUJITSU SEMICONDUCTOR AMERICA INC
|
Package Description |
PLASTIC, MW-4, 4 PIN
|
DISK BUTTON, O-CRDB-F4
|
Pin Count |
4
|
4
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Additional Feature |
LOW NOISE
|
|
Configuration |
SINGLE
|
|
DS Breakdown Voltage-Min |
3 V
|
|
Drain Current-Max (ID) |
0.04 A
|
|
FET Technology |
HIGH ELECTRON MOBILITY
|
|
Highest Frequency Band |
K BAND
|
|
JESD-30 Code |
R-PDSO-G4
|
O-CRDB-F4
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
DISK BUTTON
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation Ambient-Max |
0.18 W
|
|
Power Gain-Min (Gp) |
11.5 dB
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
DUAL
|
RADIAL
|
Transistor Application |
AMPLIFIER
|
|
Transistor Element Material |
GALLIUM ARSENIDE
|
|
Base Number Matches |
3
|
4
|
Manufacturer Package Code |
|
CASE LG
|
|
|
|
Compare CFH120-08 with alternatives
Compare FHX35LG with alternatives