CDM7-600LRTR13
vs
SIHD7N60E-GE3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
CENTRAL SEMICONDUCTOR CORP
|
VISHAY SILICONIX
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2016-06-24
|
|
| Additional Feature |
ULTRA LOW RESISTANCE
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
609 V
|
| Drain Current-Max (ID) |
7 A
|
7 A
|
| Drain-source On Resistance-Max |
0.58 Ω
|
0.6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Samacsys Manufacturer |
|
Vishay
|
| Avalanche Energy Rating (Eas) |
|
43 mJ
|
| JEDEC-95 Code |
|
TO-252AA
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Pulsed Drain Current-Max (IDM) |
|
18 A
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare CDM7-600LRTR13 with alternatives
Compare SIHD7N60E-GE3 with alternatives