CD40105BF3A
vs
CD40105BFMSR
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
HARRIS SEMICONDUCTOR
|
Package Description |
DIP, DIP16,.3
|
DIP, DIP16,.3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.71
|
8542.32.00.71
|
Clock Frequency-Max (fCLK) |
1.5 MHz
|
1.5 MHz
|
Cycle Time |
666.66 ns
|
900.9 ns
|
JESD-30 Code |
R-CDIP-T16
|
R-GDIP-T16
|
JESD-609 Code |
e0
|
e0
|
Memory Density |
64 bit
|
64 bit
|
Memory IC Type |
OTHER FIFO
|
OTHER FIFO
|
Memory Width |
4
|
4
|
Number of Functions |
1
|
1
|
Number of Terminals |
16
|
16
|
Number of Words |
16 words
|
16 words
|
Number of Words Code |
16
|
16
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
125 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Organization |
16X4
|
16X4
|
Output Enable |
YES
|
YES
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, GLASS-SEALED
|
Package Code |
DIP
|
DIP
|
Package Equivalence Code |
DIP16,.3
|
DIP16,.3
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Screening Level |
38535Q/M;38534H;883B
|
38535V;38534K;883S
|
Supply Voltage-Max (Vsup) |
18 V
|
18 V
|
Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
Surface Mount |
NO
|
NO
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
MILITARY
|
MILITARY
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Pitch |
2.54 mm
|
2.54 mm
|
Terminal Position |
DUAL
|
DUAL
|
Base Number Matches |
3
|
2
|
Additional Feature |
|
INPUT AC PARAMETRIC VALUES NOT FROM POST RADIATION MEASUREMENT; REGISTER BASED
|
Output Characteristics |
|
3-STATE
|
Supply Voltage-Nom (Vsup) |
|
15 V
|
|
|
|
Compare CD40105BFMSR with alternatives