CBR4M-L080
vs
CBR4MF-L080
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
CENTRAL SEMICONDUCTOR CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
800 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1.3 V
JESD-30 Code
R-PSFM-W4
R-PSFM-W4
JESD-609 Code
e0
e0
Non-rep Pk Forward Current-Max
300 A
300 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Output Current-Max
4 A
4 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
800 V
800 V
Reverse Current-Max
10 µA
Reverse Test Voltage
800 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Reverse Recovery Time-Max
0.3 µs