CBR1F-D080STR13 vs CBR1F-D080S feature comparison

CBR1F-D080STR13 Central Semiconductor Corp

Buy Now Datasheet

CBR1F-D080S Central Semiconductor Corp

Buy Now Datasheet
Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP CENTRAL SEMICONDUCTOR CORP
Package Description R-PDSO-G4 SMDIP-4
Pin Count 4 4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 800 V 800 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 800 V 800 V
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn80Pb20)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 5
Part Package Code DIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.5 µs
Reverse Test Voltage 800 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED