CBR1F-D0100S vs DBS107GRD feature comparison

CBR1F-D0100S Central Semiconductor Corp

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DBS107GRD Taiwan Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP TAIWAN SEMICONDUCTOR CO LTD
Part Package Code DIP
Package Description R-PDSO-G4 R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.1 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reference Standard UL RECOGNIZED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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