CBR1-L010M
vs
3N252-E4/51
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
VISHAY SEMICONDUCTORS
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
100 V
1000 V
Configuration
BRIDGE, 4 ELEMENTS
BRIDGE, 4 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF)
1 V
1 V
JESD-30 Code
R-PSIP-T4
R-PSIP-T4
JESD-609 Code
e0
e4
Non-rep Pk Forward Current-Max
50 A
60 A
Number of Elements
4
4
Number of Phases
1
1
Number of Terminals
4
4
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Output Current-Max
1.5 A
1.5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
100 V
1000 V
Reverse Current-Max
10 µA
Reverse Test Voltage
100 V
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
SILVER
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
1
1
Package Description
R-PSIP-T4
Pin Count
4
Manufacturer Package Code
CASE KBPM
Case Connection
ISOLATED
Reference Standard
UL RECOGNIZED
Compare CBR1-L010M with alternatives
Compare 3N252-E4/51 with alternatives