CBR1-D100STR13 vs CBR1-D100S feature comparison

CBR1-D100STR13 Central Semiconductor Corp

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CBR1-D100S Central Semiconductor Corp

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP CENTRAL SEMICONDUCTOR CORP
Part Package Code DIP DIP
Package Description R-PDSO-G4 SMDIP-4
Pin Count 4 4
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Breakdown Voltage-Min 1000 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 50 A 50 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 0.00001 µA 10 µA
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Reverse Test Voltage 1000 V
Technology SCHOTTKY

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