CBR1-D010 vs DB102 feature comparison

CBR1-D010 Central Semiconductor Corp

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DB102 Formosa Microsemi Co Ltd

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer CENTRAL SEMICONDUCTOR CORP FORMOSA MICROSEMI CO LTD
Package Description DIP-4
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Central Semiconductor
Breakdown Voltage-Min 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
JESD-30 Code R-PDIP-T4 R-PDIP-T4
JESD-609 Code e0
Non-rep Pk Forward Current-Max 50 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 10 µA
Reverse Test Voltage 100 V
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 4 4
Additional Feature UL RECOGNIZED
Reference Standard UL RECOGNIZED

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