CAT28C257NA-12T vs MEM832JMB-120 feature comparison

CAT28C257NA-12T Catalyst Semiconductor

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MEM832JMB-120 Mosaic Semiconductor Inc

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer CATALYST SEMICONDUCTOR INC MOSAIC SEMICONDUCTOR INC
Part Package Code QFJ
Package Description QCCJ, LDCC32,.5X.6 ,
Pin Count 32
Reach Compliance Code unknown unknown
ECCN Code EAR99 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 120 ns 120 ns
Additional Feature 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS PAGE WRITE
Command User Interface NO
Data Polling YES
Data Retention Time-Min 100
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PQCC-J32 R-CQCC-J32
JESD-609 Code e0
Length 13.97 mm
Memory Density 262144 bit 262144 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 105 °C 125 °C
Operating Temperature-Min -40 °C -55 °C
Organization 32KX8 32KX8
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Code QCCJ
Package Equivalence Code LDCC32,.5X.6
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Page Size 128 words
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 3.55 mm
Standby Current-Max 0.00015 A
Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL MILITARY
Terminal Finish TIN LEAD
Terminal Form J BEND J BEND
Terminal Pitch 1.27 mm
Terminal Position QUAD QUAD
Toggle Bit YES
Width 11.43 mm
Write Cycle Time-Max (tWC) 5 ms
Base Number Matches 2 2

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Compare MEM832JMB-120 with alternatives