CAT28C257GA-90T vs CAT28C257NI-90T feature comparison

CAT28C257GA-90T Catalyst Semiconductor

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CAT28C257NI-90T onsemi

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer CATALYST SEMICONDUCTOR INC ON SEMICONDUCTOR
Part Package Code QFJ QFJ
Package Description QCCJ, QCCJ,
Pin Count 32 32
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 90 ns 90 ns
JESD-30 Code R-PQCC-J32 R-PQCC-J32
JESD-609 Code e3 e0
Length 13.97 mm 13.97 mm
Memory Density 262144 bit 262144 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 105 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 32KX8 32KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code QCCJ QCCJ
Package Shape RECTANGULAR RECTANGULAR
Package Style CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 5 V 5 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 3.55 mm 3.55 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Finish MATTE TIN TIN LEAD
Terminal Form J BEND J BEND
Terminal Pitch 1.27 mm 1.27 mm
Terminal Position QUAD QUAD
Width 11.43 mm 11.43 mm
Write Cycle Time-Max (tWC) 5 ms 5 ms
Base Number Matches 2 2
Additional Feature 10000 PROGRAM/ERASE CYCLES; DATA RETENTION = 100 YEARS
Data Retention Time-Min 100
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30

Compare CAT28C257GA-90T with alternatives

Compare CAT28C257NI-90T with alternatives