CAT24WC32PA-REV-B vs M24C32-WBN3G/B feature comparison

CAT24WC32PA-REV-B Catalyst Semiconductor

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M24C32-WBN3G/B STMicroelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer CATALYST SEMICONDUCTOR INC STMICROELECTRONICS
Part Package Code DIP DIP
Package Description DIP, DIP,
Pin Count 8 8
Reach Compliance Code unknown compliant
Clock Frequency-Max (fCLK) 0.1 MHz 0.4 MHz
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0 e3
Length 9.59 mm 9.27 mm
Memory Density 32768 bit 32768 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 8 8
Number of Words 4096 words 4096 words
Number of Words Code 4000 4000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 105 °C 125 °C
Operating Temperature-Min -40 °C -40 °C
Organization 4KX8 4KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial SERIAL SERIAL
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified Not Qualified
Seated Height-Max 4.57 mm 5.33 mm
Serial Bus Type I2C I2C
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 2.5 V 2.5 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade INDUSTRIAL AUTOMOTIVE
Terminal Finish TIN LEAD Matte Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 7.62 mm 7.62 mm
Write Cycle Time-Max (tWC) 10 ms 5 ms
Base Number Matches 2 2
Pbfree Code Yes
ECCN Code EAR99
HTS Code 8542.32.00.51
I2C Control Byte 1010DDDR
Package Equivalence Code DIP8,.3
Screening Level AEC-Q100
Supply Current-Max 0.005 mA

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Compare M24C32-WBN3G/B with alternatives