C2M0080120D
vs
MSC080SMA120B4
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
WOLFSPEED INC
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
|
|
Reach Compliance Code |
compliant
|
compliant
|
Samacsys Manufacturer |
Wolfspeed
|
Microchip
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
Drain Current-Max (ID) |
36 A
|
37 A
|
Drain-source On Resistance-Max |
0.098 Ω
|
0.1 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-247
|
TO-247
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T4
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
80 A
|
90 A
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
Base Number Matches |
1
|
2
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.29.00.95
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
200 W
|
|
|
|
Compare C2M0080120D with alternatives
Compare MSC080SMA120B4 with alternatives