BZY55B3V3 vs BZY55B3V3RBG feature comparison

BZY55B3V3 Taiwan Semiconductor

Buy Now Datasheet

BZY55B3V3RBG Taiwan Semiconductor

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Package Description R-PDSO-R2
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code R-PDSO-R2 R-PDSO-R2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Reference Voltage-Nom 3.3 V 3.3 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position DUAL DUAL
Voltage Tol-Max 2% 2%
Working Test Current 5 mA 5 mA
Base Number Matches 1 1
Rohs Code Yes
Dynamic Impedance-Max 85 Ω
Knee Impedance-Max 600 Ω
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 2 µA
Reverse Test Voltage 1 V
Time@Peak Reflow Temperature-Max (s) 30

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