BZX85C6V8T26R vs BZX85-C6V8 feature comparison

BZX85C6V8T26R National Semiconductor Corporation

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BZX85-C6V8 Galaxy Microelectronics

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Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description O-LALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-LALF-W2 O-LALF-W2
Knee Impedance-Max 300 Ω 300 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.3 W 1.3 W
Qualification Status Not Qualified
Reference Voltage-Nom 6.8 V 6.8 V
Reverse Current-Max 1 µA 1 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5%
Working Test Current 35 mA 35 mA
Base Number Matches 2 6
Dynamic Impedance-Max 3.5 Ω
Operating Temperature-Min -55 °C
Reference Standard MIL-STD-202
Reverse Test Voltage 4 V
Voltage Temp Coeff-Max 4.08 mV/°C

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