BZX84C9V1L99Z vs BZX84C9V1-H feature comparison

BZX84C9V1L99Z National Semiconductor Corporation

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BZX84C9V1-H Formosa Microsemi Co Ltd

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Part Life Cycle Code Transferred Active
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP FORMOSA MICROSEMI CO LTD
Package Description R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.35 W 0.3 W
Qualification Status Not Qualified
Reference Voltage-Nom 9.1 V 9.1 V
Reverse Current-Max 0.5 µA 0.5 µA
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Voltage Temp Coeff-Max 7 mV/°C 7 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 5 mA
Base Number Matches 3 1
Dynamic Impedance-Max 15 Ω
Knee Impedance-Max 100 Ω
Operating Temperature-Min -55 °C
Reference Standard MIL-STD-19500; MIL-STD-750
Reverse Test Voltage 6 V

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